ABSTRACT
Abstract?AlM:To evaluate the efficacy and safety of silicone oil removal with a 23G transconjunctival sutureless vitrectomy system linked disposable transfusion tube and self-made suction tip.?METHODS: The suction tip was made with a 23G infusion tube be cut from the end of the 5mm. lt was used to connect the disposable transfusion tube and 23G puncture cannula. The disposable transfusion tube which was cut from the end of the MaiFei's pipe was connected with the effusion box of the vitreous cutter. lntraocular silicone oil was proactive suction and removed through two incisions on pars plana ciliaris with the vitreous cutter suction system.?RESULTS:Only 13 cases (9. 8%) need suture puncture ports in 132 cases in the operation. Operation time was 7-28min. The average operation time was 15. 1± 6. 2min. ln early postoperative, there were 107 cases ( 81. 1%) appeared lower intraocular pressure (<11mmHg) and 2 cases appeared choroid detachment in 132 cases patients. Most of the patients recovered to normal but 2 case ( 1. 5%) high myopia macular hole retinal detachment occurred recurrent retinal detachment 1wk after operation. Silicone oil was removed cleanly in the most patients, only 4 cases (3. 0%) with a little silicone oil residue.?CONCLUSlON:The surgery that silicone oil is removed through two incisions with a 23G transconjunctival sutureless vitrectomy system linked disposable transfusion tube and self - made suction tip has the advantages of safe, effective, fast, economic, and it is worthy of popularization and application in clinical.
ABSTRACT
<p><b>OBJECTIVE</b>To evaluate the efficacy of semiconductor low level laser irradiation for the treatment of postoperative exposure of hydroxyapatite orbital implants.</p><p><b>METHODS</b>22 cases with postoperative exposure of hydroxyapatite orbital implants were divided into three groups according to the size of implants exposure. The exposure wound in the 3 groups was irradated with semiconductor low level laser 5 min per day for 5-15 days. The follow-up period ranged from 2 to 24 months.</p><p><b>RESULTS</b>In the group with less then 3 mm of exposure, the wound healed in 1 week after 5-10 days irradiation; in the group with implant exposure of 4-7 mm, the would healed in 1-2 weeks after 10-15 days irradiation; in the group with implant exposure of 8-10 mm, the would healed in 2-3 weeks after 10-15 days irradiation. Compared with the treatments of drugs and/or surgical repair, which was used for another 20 cases of exposure of hydroxyapatite orbital implants, semiconductor low level laser increased healing rate obviously in the groups with implant exposure of 4-7 mm and 8-10 mm (P = 0.019, 0.018).</p><p><b>CONCLUSION</b>Semiconductor low level laser has better effects than drugs and/or surgical repair for exposure of hydroxyapatite orbital implants.</p>